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NTE221 MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications
Description: The NTE221 is an N-channel depletion type, dual-insulated gate, field-effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF-amplifier applications. Features: D Extremely Low Feedback Capacitance D High Power Gain Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-to-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +20V Gate 1-to-Source Voltage, VG1S Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1V to -8V Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V to -8V Gate 2-to-Source Voltage, VG2S Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -8V to 40% of VDS Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -8V to +20V Drain-to-Gate Voltage, VDG1 or VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Pulsed Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Transistor Dissipation (TA = +25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/C Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Lead Temperature (During Soldering, 1/32" from seating surface, 10sec max), TL . . . . . . . . +265C Note 1. Pulse test: Pulse Width 20ms, Duty Cycle 15%. Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Gate 1-to-Source Cutoff Voltage Gate 2-to-Source Cutoff Voltage Gate 1 Leakage Current Gate 2 Leakage Current Symbol Test Conditions Min - - - - Typ -2 -2 - - Max - - 1 1 Unit V V nA nA VG1S(off) VDS = 15V, VG2S = 4V, ID = 200mA VG2S(off) VDS = 15V, VG1S = 0, ID = 200mA IG1SS IG2SS VG1S = 20V, VG2S = 0, VDS = 0 VG2S = 20V, VG1S = 0, VDS = 0
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter Drain Current Forward Transconductance Symbol IDSS gfs Test Conditions VDS = 13V, VG1S = 0, VG2S = 4V VDS = 13V, ID = 10mA, VG2S = 4V, f = 1kHz Min - - Typ 18 1000 Max - - Unit mA mhos
Performance Characteristics: (TA = +25C, f = 200MHz, Note 2 unless otherwise specified)
Parameter Small-Signal, Short Circuit Reverse Transfer Capacitance Output Capacitance Input Capacitance Input Resistance Output Resistance Magnitude of Forward Transconductance Phase Angle of Forward Transadmittance Maximum Available Power Gain Maximum Usable Power Gain (Unneutralized) Power Gain Noise Figure MAG MUGu GPS NF Note 3 Symbol Crss Coss Ciss riss ross |Yfs| Test Conditions (Drain-to-Gate 1) at f = 1MHz Min - - - - - - - - - - - Typ 0.02 2.2 5.5 1.2 2.8 11000 -46 20 20 17.5 - Max 0.03 - - - - - - - - - 5 Unit pF pF pF k k mhos deg dB dB dB dB
Note 2. VG1S is adjusted for ID = 10mA, Gate 2 at AC ground potential, VDS = 13V, VG2S = 4V. Note 3. Limited by practical design considerations.
.220 (5.58) Dia .185 (4.7) Dia
.190 (4.82)
.030 (.762)
.500 (12.7) Min
.018 (0.45) Dia Gate 2 Drain Gate 1
45 Source/Case .040 (1.02)

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